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UNISONIC TECHNOLOGIES CO., LTD DTB123Y DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input. PNP SILICON TRANSISTOR 3 2 1 SOT-23 3 EQUIVALENT CIRCUIT R1 IN R2 GND (+) OUT 2 1 SOT-323 *Pb-free plating product number:DTB123YL IN GND OUT R1=2.2K R2=10K ORDERING INFORMATION Order Number Normal Lead Free Plating DTB123Y-AE3-R DTB123YL-AE3-R DTB123Y-AL3-R DTB123YL-AL3-R Package SOT-23 SOT-323 Pin Assignment 1 2 3 G I O G I O Packing Tape Reel Tape Reel DTB123YL-AE3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23, AL3: SOT-323 (3) L: Lead Free Plating, Blank: Pb/Sn MARKING BC3Y www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R220-019,A DTB123Y ABSOLUTE MAXIMUM RATINGS (Ta=25C) PNP SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC -50 V Input Voltage VIN -12 ~ +5 V Output Current IC -500 mA Power Dissipation PD 200 mW Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL SPECIFICATIONS (Ta=25C, unless others specified) SYMBOL VIN(OFF) Input Voltage VIN(ON) Output Voltage VOUT(ON) Input Current IIN Output Current IOUT(OFF) DC Current Gain hFE Input Resistance R1 Resistor Ratio R2/R1 Transition Frequency (Note) fT Note: Transition frequency of the device PARAMETER TEST CONDITIONS VCC =-5V, IOUT =-100A VOUT =-0.3V, IOUT =-20mA IOUT/IIN =-50mA/-2.5mA VIN=-5V VCC =-50V, VIN =0V VOUT =-5V, IOUT =-50mA MIN -2 -0.1 -0.3 -3.0 -0.5 2.86 5.5 TYP MAX -0.3 UNIT V V mA A K MHz 56 1.54 3.6 VCE =-10V, IE =50mA, f=100MHz 2.2 4.5 200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R220-019,A DTB123Y TYPICAL CHARACTERISTICS Input Voltage vs. Output Current (ON Characteristics) -100 -50 Input Voltage, VIN (ON) (V) PNP SILICON TRANSISTOR Output Current vs. Input Voltage (OFF Characteristics) -10m -5m VCC=-5V -2m -1m Output Current, IOUT (A) VOUT=-0.3V -20 -10 -5 -2 -1 -500m -200m -100m -0.5 -1 -2 -5 -10 -20 -50 -100 -200 -500 Ta=-40 25 100 -50 -200 -100 -50 -20 -10 -5 -2 -1 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 Ta=100 25 -40 Output Current, IOUT (mA) Input Voltage, VIN(OFF) (V) DC Current Gain vs. Output Current 1000 500 DC Current Gain, hFE Output Voltage vs. Output Current -1000 -500 Output Voltage, VOUT(ON) (mV) VOUT=-5V Ta=100 25 -40 lOUT/lIN=20 Ta=100 25 -40 200 100 50 20 10 5 2 1 -0.5 -1 -200 -100 -50 -20 -10 -5 -2 -1 -0.5 -1 -2 -2 -5 -10 -20 -50 -100 -200 -500 -5 -10 -20 -50 -100 -200 -500 Output Current, IOUT (mA) Output Current, IOUT (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R220-019,A |
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